Estudo da parede de domínio transversal na presença de impurezas magnéticas sob efeito de corrente elétrica polarizada em spin via simulação micromagnética

Abstract

Understand and control the domain wall movement in nanowires is extremely important for the development of new technologies for an application in data storage devices. It is known that defect as notches in nanowires are useful to pinning domain walls. Nevertheless, the pinning potential intensity generated by this type of defect is strong, and for depinning the domain wall it is necessary to apply a high current density. However, it is possible to create traps for domains walls by locally varying magnetic properties of the nanowire, such as: the exchange constant, saturation magnetization, anisotropy constant, Gilbert damping parameters. We define those regions as magnetic impurities once their magnetic properties differ from the nanowire proper-ties. In this study, we realized micromagnetic simulations in order to investigate the dynamics of a transverse domain wall (TDW) trapped in a magnetic defect using electric current pulses of spin-polarized. In order to create traps to TDW pinning, we have modeled the magnetic impurities by varying the exchange constant locally. When we adjusted the interaction poten-tial between the magnetic impurities and the nanowire we showed that low intensity and short duration current pulses are capable of depinning the TDW. At last, we demonstrated that it is possible to control the TDW position applying sequential current pulses in a nanowire planar containing a linear distribution of magnetic impurities equally distributed.