Fabricação e caracterização de OLEDs utilizando novos transportadores de buracos e novos emissores de luz para aplicações em eletrônica orgânica

Abstract

The continuing research project to develop new organic materials that are more efficient, purest and with a good morphological and thermal stability is essential to apply them to new organic devices. Therefore, the aim of this thesis is the fabrication and the characterization of organic electroluminescent devices (OLEDs). This research was developed based on two distinctive approaches. At first, it was used a new xanthene derivative (XD) class as a hole transporting material and, secondly, it is shown two new Europium complex as light emitters. The use of XD as hole transporting layer (HTL) was made to fabricated bilayers OLEDs using the commercial material Alq3 as light emitters. Their results were compared to the reference device previously fabricated with the commercial material α-NPD. All XD devices presented a higher current efficiency when compared to the α-NPD reference device. A theoretical and experimental study of the XD and α-NPD holes mobility showed that all XD has a higher hole mobility than the commercial material. The higher hole mobility of the XD layer resulted in a better balance between hole and electrons and consequently, in a higher number of combinations, resulting in devices with improved efficiency. At the second part of this study, it was studied two Europium complexes as red-light emitters. The Europium complex, [Eu(btfa)3(dmbpy)] and [Eu(TTA)3(PhenSe)], showed the transitions characteristic of ⁵D₀ → ⁷FJ (J = 0-4) in solution and in a thermal evaporated thin film. The [Eu(btfa)3(dmbpy)] complex was used to fabricate devices with two different configurations and, although the OLEDs have shown a wide band due to the Alq3 contribution, the OLEDs presented good efficiency. In contrast, the electroluminescence of the [Eu (TTA)3(PhenSe)] complex based devices showed a wide band centered in 580 nm, in this case, covering the narrow ⁵D₀ → ⁷FJ (J = 0,1) transitions.