Transporte eletrônico quântico em uma heteroestrutura de dupla barreira(HDB) assistido por fônons

Abstract

In this thesis, we study theoretically the transport properties of electrons and emission of a coherent beam of TA phonons with terahetz frequencies, known as saser, from a semiconductor device of nanometric dimensions formed by a double barrier heterostructure and controlled by an external potential. The system is described by a Hamiltonian in the 'tight-binding' approximation in which the electrons, the phonons, the electron-phonon and the electron-electron interactions contributions are included. To study the electronic transport properties we use the Keldysh formalism, which directly considers the many body's interactions, to reduce the flow of electrons out of equilibrium to one that depends on the retarded Green functions that are in the thermodynamic equilibrium at a given temperature. A procedure known as decimation is used repeatedly throughout this work to find such retarded Green functions. To study the emission properties of the TA phonons, we solve the kinetic equations that govern the populations of electrons in the first two resonant levels and the phonons in the well. The potential profile and the charge distribution energy are calculated self-consistently, through a system of equations which includes the Poisson equation. We verify in our results the well known regions of instability at the beginning LO phonon emission and bistability at the end of the second peak current. We analyze the behavior of these regions through the change in the barriers thickness of the HDB. A study of the influence of temperature on saser is carried out in this work. At low temperatures, our results coincide with those in the literature.