Síntese e caracterização de filmes de dicalcogenetos de metais de transição

Abstract

This work aimed to study films of materials known as transition metal dichalcogenides (TMDs). Initially, the goal was to find the best synthesis parameters for obtaining monolayer films using the Chemical Vapor Deposition (CVD) method. Transition metal dichalcogenide films have gained prominence in the scientific community due to their importance and technological potential. These films exhibit a variety of exceptional electronic properties, such as being semiconductors with an adjustable bandgap. They can be used in high-speed and low-power electronic devices. In their production, they can be made thin and flexible, making them suitable for use in flexible displays, transparent solar cells, and other portable devices. After synthesis, the obtained samples underwent a characterization process. Raman spectroscopy and scanning electron microscopy measurements were performed. With the results of these measurements, we were able to study the synthesis parameters of MoS2 and MoSe2 in order to obtain continuous films with good crystal quality for further use in electronic devices.