Espalhamento Raman de sistemas a base de GaN dopados

Abstract

In this work we present calculations of eletronic Raman cross-sections of doped GaN based system via charge - density mechanism. The studied structures were δ-doped superlattices and uniform doped GaN systems. In the case of periodically doped superlattice the eletronic structure was obtained using Density Funcional Theory in the local density approximation. Concerning the uniform doped system, the nature of their Raman elementary excitations were investigated theoretically and experimentally. Such structures consisted of cubic GaN uniformly doped (type-n) grown on GaAs substrates.