Determinação de parâmetros térmicos do carbeto de silício via espectroscopia de lente térmica

Abstract

In this work, we will accomplish the thermo-optical characterization of two hexagonal politypes of Silicon Carbide (SiC) using a spectroscopic technique known as Thermal Lens Spectroscopy (TLS). A brief summary of TLS historical evolution and a brief study about semiconductors, in special the SiC, are presented. We will also show, in details, the whole proccess of experimental setting up of the TLS, as we did in our lab. Finally, we will use the TLS techinique to measure the thermal diffusivity and the optical path change with temperature (ds/dT) of SiC-4H and SiC-6H samples. This parameters bring us information about the heat flowing through the sample (thermal diffusivity) and the optical distortion in a sample caused by a temperature change (ds/dT). We shall compare our results for thermal diffusivity with avaliable data on literature. There is no avaliable data on literature optical path change with temperature (ds/dT).